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| SI3446DV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 5.3 4.4 rDS(on) (W) 0.045 @ VGS = 4.5 V 0.065 @ VGS = 2.5 V D TrenchFETr Power MOSFET D 100% Rg Tested COMPLIANT RoHS TSOP-6 Top View 1 6 (1, 2, 5, 6) D 3 mm 2 5 (3) G 3 4 2.85 mm (4) S Ordering Information: SI3446DV-T1 SI3446DV-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS 4.2 20 1.7 2.0 1.3 -55 to 150 W _C A Symbol VDS VGS Limit 20 "12 5.3 Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 5 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70715 S-51451--Rev. C, 01-Aug-05 www.vishay.com Symbol RthJA Limit 62.5 Unit _C/W 1 SI3446DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.3 A VGS = 2.5 V, ID = 4.4 A VDS = 10 V, ID = 5.3 A IS = 1.7 A, VGS = 0 V 10 0.032 0.045 20 1.2 0.045 0.065 W S V 0.6 1.6 "100 1 5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 0.5 30 50 65 35 60 VDS = 10 V, VGS = 4.5 V, ID = 5.3 A 10 2.5 2.2 3.0 50 80 100 60 90 ns W 20 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 70715 S-51451--Rev. C, 01-Aug-05 SI3446DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5, 4.5, 4, 3.5, 3 V 16 2.5 V I D - Drain Current (A) 12 I D - Drain Current (A) 12 16 20 Transfer Characteristics 8 2V 4 1, 1.5 V 0 0 1 2 3 4 8 4 TC = 125_C 25_C -55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 1500 Capacitance r DS(on)- On-Resistance ( W ) 0.08 C - Capacitance (pF) 1200 Ciss 900 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V 600 Coss 300 Crss 0.02 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 VDS = 10 V ID = 5.3 A V GS - Gate-to-Source Voltage (V) 4 rDS(on) - On-Resistance 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.3 A 2 (Normalized) 3 1.2 1.0 1 0.8 0 0 2 4 6 8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70715 S-51451--Rev. C, 01-Aug-05 www.vishay.com 3 SI3446DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.10 ID = 5.3 A 10 I S - Source Current (A) r DS(on)- On-Resistance ( W ) 0.08 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C TJ = 25_C 0.06 0.04 0.02 1 0.00 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 25 Single Pulse Power 0.2 VGS(th) Variance (V) ID = 250 mA 20 -0.2 Power (W) -0.0 15 10 -0.4 5 -0.6 -50 -25 0 25 50 75 100 125 150 0 0.01 0.10 Time (sec) 1.00 10.00 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 S 10-1 ( ) PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 1 10 www.vishay.com 4 Document Number: 70715 S-51451--Rev. C, 01-Aug-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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